infineon technologies agbf1中文数据手册-datasheet5电子元器件查询网

对比	型号	厂商	描述	价格
对比	BF1012	Infineon Technologies AG	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-143, 4 PIN	获取价格 -	请求模型数据手册替代料
对比	BF1005S-E6327	Infineon Technologies AG	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	获取价格 -	请求模型数据手册替代料
AD	FGY120T65SPD-F085	Onsemi	IGBT/MOSFET驱动器,FGY120T65 - IGBT, 650V, 120A Field Stop, Trench With Soft Fast Recovery Diode 数据手册立即购买了解更多		数据手册立即购买
对比	BF1012S	Infineon Technologies AG	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-143, 4 PIN	获取价格 -	请求模型数据手册替代料
对比	BF199	Infineon Technologies AG	Transistor	获取价格 -	请求模型数据手册替代料
对比	BF1005E6327HTSA1	Infineon Technologies AG	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET	获取价格 -	请求模型数据手册替代料
对比	BF1005W	Infineon Technologies AG	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT343, 4 PIN	获取价格 -	请求模型数据手册替代料
对比	BF1005SW-E6327	Infineon Technologies AG	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	获取价格 -	请求模型数据手册替代料
对比	BF1005SR-E6327	Infineon Technologies AG	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	获取价格 -	请求模型数据手册替代料
对比	BF1005-E6433	Infineon Technologies AG	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	获取价格 -	请求模型数据手册替代料
对比	BF1009SW	Infineon Technologies AG	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET	获取价格 -	请求模型数据手册替代料
对比	BF1005S	Infineon Technologies AG	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4	获取价格 -	请求模型数据手册替代料
对比	BF1009S-E6327	Infineon Technologies AG	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	获取价格 -	请求模型数据手册替代料
对比	BF1005S-E6433	Infineon Technologies AG	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	获取价格 -	请求模型数据手册替代料
对比	BF1005SW	Infineon Technologies AG	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-343, 4 PIN	获取价格 -	请求模型数据手册替代料
对比	BF1005SR	Infineon Technologies AG	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4	获取价格 -	请求模型数据手册替代料
对比	BF1005R	Infineon Technologies AG	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-143R, 4 PIN	获取价格 -	请求模型数据手册替代料
对比	BF1005RE6327	Infineon Technologies AG	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	获取价格 -	请求模型数据手册替代料
对比	BF1005E6327	Infineon Technologies AG	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET	获取价格 -	请求模型数据手册替代料
对比	BF1012E6327	Infineon Technologies AG	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET	获取价格 -	请求模型数据手册替代料
对比	BF1005SW-E6433	Infineon Technologies AG	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	获取价格 -	请求模型数据手册替代料

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